EFFECTS OF OXYGEN AND DOPANT ON LIFETIME IN NEUTRON-IRRADIATED SILICON

被引：49
作者：
CURTIS, OL
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1966年 / NS13卷 / 06期
关键词：
D O I：
10.1109/TNS.1996.4324343
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：33 / +
页数：1
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