EFFECTS OF OXYGEN AND DOPANT ON LIFETIME IN NEUTRON-IRRADIATED SILICON

被引：49

作者：

CURTIS, OL

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1966年 / NS13卷 / 06期

关键词：

D O I：

10.1109/TNS.1996.4324343

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：33 / +

页数：1

共 15 条

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[3]

CURTIS, 1965, 2351 HARR DIAM LAB R

[4] RADIATION-INDUCED RECOMBINATION AND TRAPPING CENTERS IN GERMANIUM .1. NATURE OF RECOMBINATION PROCESS [J].

CURTIS, OL ;

CRAWFORD, JH .

PHYSICAL REVIEW, 1961, 124 (06) :1731-&

[5] AN EFFICIENT FLASH X-RAY FOR MINORITY CARRIER LIFETIME MEASUREMENTS AND OTHER RESEARCH PURPOSES [J].

CURTIS, OL ;

WICKENHISER, RC .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (09) :1224-+

[6] RADIATION-INDUCED RECOMBINATION CENTERS IN GERMANIUM [J].

CURTIS, OL ;

CLELAND, JW ;

CRAWFORD, JH .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (12) :1722-1729

[7] EXPLANATION FOR DISCREPANCY IN RECOMBINATION LEVEL POSITIONS IN IRRADIATED N-TYPE GE REPORTED BY VARIOUS OBSERVERS [J].

CURTIS, OL .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) :2094-&

[8] RADIATION-INDUCED RECOMBINATION AND TRAPPING CENTERS IN GERMANIUM .2. ANNEALING IN GAMMA-IRRADIATED, ANTIMONY-, AND ARSENIC-DOPED MATERIAL [J].

CURTIS, OL ;

CRAWFORD, JH .

PHYSICAL REVIEW, 1962, 126 (04) :1342-&

[9] DISORDERED REGIONS IN SEMICONDUCTORS BOMBARDED BY FAST NEUTRONS [J].

GOSSICK, BR .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1214-1218

[10]

MACKAY JW, 1965, RADIATION DAMAGE SEM, P12

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