共 15 条
[2]
ANNEALING OF RADIATION DEFECTS IN SEMICONDUCTORS
[J].
JOURNAL OF APPLIED PHYSICS,
1959, 30 (08)
:1258-1268
[3]
CURTIS, 1965, 2351 HARR DIAM LAB R
[4]
RADIATION-INDUCED RECOMBINATION AND TRAPPING CENTERS IN GERMANIUM .1. NATURE OF RECOMBINATION PROCESS
[J].
PHYSICAL REVIEW,
1961, 124 (06)
:1731-&
[5]
AN EFFICIENT FLASH X-RAY FOR MINORITY CARRIER LIFETIME MEASUREMENTS AND OTHER RESEARCH PURPOSES
[J].
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS,
1965, 53 (09)
:1224-+
[8]
RADIATION-INDUCED RECOMBINATION AND TRAPPING CENTERS IN GERMANIUM .2. ANNEALING IN GAMMA-IRRADIATED, ANTIMONY-, AND ARSENIC-DOPED MATERIAL
[J].
PHYSICAL REVIEW,
1962, 126 (04)
:1342-&
[10]
MACKAY JW, 1965, RADIATION DAMAGE SEM, P12