NITROGEN IMPLANTATION IN GAAS1-XPX .2. ANNEALING PROPERTIES

被引：11

作者：

ANDERSON, RE ^{[1
]}

WOLFORD, DJ ^{[1
]}

STREETMAN, BG ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 06期

关键词：

D O I：

10.1063/1.324009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2453 / 2462

页数：10

共 30 条

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EISEN, FH ;

HASKELL, JD ;

WELCH, B ;

PASHLEY, RD .

APPLIED PHYSICS LETTERS, 1972, 21 (12) :601-&

[12] ANNEALING OF GAMMA-RAY IRRADIATED N-TYPE GERMANIUM [J].

ISHINO, S ;

NAKAZAWA, F ;

HASIGUTI, RR .

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[13] ARSENIC AND CADMIUM IMPLANTATIONS INTO N-TYPE GALLIUM ARSENIDE [J].

ITOH, T ;

KUSHIRO, Y .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :5120-+

[14]

ITOH T, 1971, ION IMPLANTATION SEM, P168

[15]

JOHNSON WS, 1970, PROJECTED RANGE STAT

[16]

MAKITA Y, 1974, 4TH P INT C ION IMPL

[17]

MATSUMORI T, 1974, 4TH P INT C ION IMPL

[18]

MAYER JW, 1970, ION IMPLANTATION SEM, P75

[19]

Naguib H. M., 1973, Radiation Effects, V18, P279, DOI 10.1080/00337577308232136

[20] TYPE CONVERSION AND P-N JUNCTION FORMATION IN LITHIUM-ION-IMPLANTED ZNSE [J].

PARK, YS ;

CHUNG, CH .

APPLIED PHYSICS LETTERS, 1971, 18 (03) :99-&

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