NITROGEN IMPLANTATION IN GAAS1-XPX .2. ANNEALING PROPERTIES

被引：11

作者：

ANDERSON, RE ^{[1
]}

WOLFORD, DJ ^{[1
]}

STREETMAN, BG ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 06期

关键词：

D O I：

10.1063/1.324009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2453 / 2462

页数：10

相关论文

共 30 条

[1] Bell E. C., 1974, Radiation Effects, V22, P253, DOI 10.1080/10420157408230802
[2] PHOTOLUMINESCENCE STUDIES OF VACANCIES AND VACANCY-IMPURITY COMPLEXES IN ANNEALED GAAS
CHIANG, SY
PEARSON, GL
[J]. JOURNAL OF LUMINESCENCE, 1975, 10 (05) : 313 - 322
[3] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS
CHIANG, SY
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2986 - 2991
[4] COMPARISON OF GROUP-4 AND GROUP-6 DOPING BY IMPLANTATION IN GAAS
DAVIES, DE
KENNEDY, JK
LUDINGTON, CE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1374 - 1377
[5] GOLDSMITH N, 1967, RCA REV, V28, P153
[6] PROMOTION OF RADIATIVE RECOMBINATION IN GAAS1-XPX BY N-ION IMPLANTATION
GONDA, SI
MAKITA, Y
MAEKAWA, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (09) : 712 - 716
[7] DIFFUSION OF GALLIUM THROUGH SILICON DIOXIDE LAYER
GROVE, AS
LEISTIKO, O
SAH, CT
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (09) : 985 - &
[8] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE
GYULAI, J
MAYER, JW
MITCHELL, IV
RODRIGUEZ, V
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (08) : 332 - +
[9] HAMMOND ML, 1968, T METALL SOC AIME, V242, P526
[10] Harris J. S., 1971, ION IMPLANTATION SEM, P157