GAAS INTEGRATED MICROWAVE CIRCUITS

被引:6
作者
MEHAL, EW
WACKER, RW
机构
关键词
D O I
10.1109/JSSC.1968.1049853
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:113 / &
相关论文
共 7 条
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[3]  
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[4]   ENHANCE GAAS ETCH RATES NEAR EDGES OF A PROTECTIVE MASK [J].
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[5]   PREPARATION OF 0.5-103OHM-CM GAAS BY ACCEPTOR PRECIPITATION DURING HEAT TREATMENT OF OXYGEN GROWN CRYSTALS [J].
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[6]   ROLE OF OXYGEN IN REDUCING SILICON CONTAMINATION OF GAAS DURING CRYSTAL GROWTH [J].
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[7]  
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