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GAAS INTEGRATED MICROWAVE CIRCUITS
被引:6
作者
:
MEHAL, EW
论文数:
0
引用数:
0
h-index:
0
MEHAL, EW
WACKER, RW
论文数:
0
引用数:
0
h-index:
0
WACKER, RW
机构
:
来源
:
IEEE JOURNAL OF SOLID-STATE CIRCUITS
|
1968年
/ SC 3卷
/ 02期
关键词
:
D O I
:
10.1109/JSSC.1968.1049853
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:113 / &
相关论文
共 7 条
[1]
OHMIC CONTACTS FOR GAAS DEVICES
[J].
COX, RH
论文数:
0
引用数:
0
h-index:
0
COX, RH
;
STRACK, H
论文数:
0
引用数:
0
h-index:
0
STRACK, H
.
SOLID-STATE ELECTRONICS,
1967,
10
(12)
:1213
-+
[2]
THE PREPARATION OF SEMI-INSULATING GALLIUM ARSENIDE BY CHROMIUM DOPING
[J].
CRONIN, GR
论文数:
0
引用数:
0
h-index:
0
CRONIN, GR
;
HAISTY, RW
论文数:
0
引用数:
0
h-index:
0
HAISTY, RW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(07)
:874
-877
[3]
MEHAL EW, 1966, T METALL SOC AIME, V236, P263
[4]
ENHANCE GAAS ETCH RATES NEAR EDGES OF A PROTECTIVE MASK
[J].
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(09)
:958
-&
[5]
PREPARATION OF 0.5-103OHM-CM GAAS BY ACCEPTOR PRECIPITATION DURING HEAT TREATMENT OF OXYGEN GROWN CRYSTALS
[J].
WOODALL, JM
论文数:
0
引用数:
0
h-index:
0
WOODALL, JM
;
WOODS, JF
论文数:
0
引用数:
0
h-index:
0
WOODS, JF
.
SOLID STATE COMMUNICATIONS,
1966,
4
(01)
:33
-&
[6]
ROLE OF OXYGEN IN REDUCING SILICON CONTAMINATION OF GAAS DURING CRYSTAL GROWTH
[J].
WOODS, JF
论文数:
0
引用数:
0
h-index:
0
WOODS, JF
;
AINSLIE, NG
论文数:
0
引用数:
0
h-index:
0
AINSLIE, NG
.
JOURNAL OF APPLIED PHYSICS,
1963,
34
(05)
:1469
-&
[7]
[No title captured]
←
1
→
共 7 条
[1]
OHMIC CONTACTS FOR GAAS DEVICES
[J].
COX, RH
论文数:
0
引用数:
0
h-index:
0
COX, RH
;
STRACK, H
论文数:
0
引用数:
0
h-index:
0
STRACK, H
.
SOLID-STATE ELECTRONICS,
1967,
10
(12)
:1213
-+
[2]
THE PREPARATION OF SEMI-INSULATING GALLIUM ARSENIDE BY CHROMIUM DOPING
[J].
CRONIN, GR
论文数:
0
引用数:
0
h-index:
0
CRONIN, GR
;
HAISTY, RW
论文数:
0
引用数:
0
h-index:
0
HAISTY, RW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(07)
:874
-877
[3]
MEHAL EW, 1966, T METALL SOC AIME, V236, P263
[4]
ENHANCE GAAS ETCH RATES NEAR EDGES OF A PROTECTIVE MASK
[J].
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(09)
:958
-&
[5]
PREPARATION OF 0.5-103OHM-CM GAAS BY ACCEPTOR PRECIPITATION DURING HEAT TREATMENT OF OXYGEN GROWN CRYSTALS
[J].
WOODALL, JM
论文数:
0
引用数:
0
h-index:
0
WOODALL, JM
;
WOODS, JF
论文数:
0
引用数:
0
h-index:
0
WOODS, JF
.
SOLID STATE COMMUNICATIONS,
1966,
4
(01)
:33
-&
[6]
ROLE OF OXYGEN IN REDUCING SILICON CONTAMINATION OF GAAS DURING CRYSTAL GROWTH
[J].
WOODS, JF
论文数:
0
引用数:
0
h-index:
0
WOODS, JF
;
AINSLIE, NG
论文数:
0
引用数:
0
h-index:
0
AINSLIE, NG
.
JOURNAL OF APPLIED PHYSICS,
1963,
34
(05)
:1469
-&
[7]
[No title captured]
←
1
→