THE KINETICS AND MECHANISM OF OXIDE LAYER FORMATION FROM POROUS SILICON FORMED ON P-SI SUBSTRATES

被引：103

作者：

YON, JJ

BARLA, K

HERINO, R

BOMCHIL, G

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 03期

关键词：

D O I：

10.1063/1.339761

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1042 / 1048

页数：7

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