THE KINETICS AND MECHANISM OF OXIDE LAYER FORMATION FROM POROUS SILICON FORMED ON P-SI SUBSTRATES

[1] FORMATION AND OXIDATION OF POROUS SILICON BY ANODIC REACTION [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 383 - 392

[2] N+-IPOS SCHEME AND ITS APPLICATIONS TO ICS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) : 756 - 757

[3] STRESS IN OXIDIZED POROUS SILICON LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 439 - 441

[4] BARLA K, 1986, 1986 P EUR MAT RES S, P43

[5] BOWLING RA, 1983, 1983 P EL SOC M

[6] Herino R., 1984, Materials Letters, V2, P519, DOI 10.1016/0167-577X(84)90086-7

[7] HERINO R, IN PRESS J ELECTROCH

[8] HETERINGTON G, 1964, PHYS CHEM GLASSES-B, V5, P130

[9] FIPOS (FULL ISOLATION BY POROUS OXIDIZED SILICON) TECHNOLOGY AND ITS APPLICATION TO LSIS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (03) : 297 - 302

[10] A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICON [J]. SOLID-STATE ELECTRONICS, 1981, 24 (02) : 159 - &

[1] FORMATION AND OXIDATION OF POROUS SILICON BY ANODIC REACTION [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 383 - 392

[2] N+-IPOS SCHEME AND ITS APPLICATIONS TO ICS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) : 756 - 757

[3] STRESS IN OXIDIZED POROUS SILICON LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 439 - 441

[4] BARLA K, 1986, 1986 P EUR MAT RES S, P43

[5] BOWLING RA, 1983, 1983 P EL SOC M

[6] Herino R., 1984, Materials Letters, V2, P519, DOI 10.1016/0167-577X(84)90086-7

[7] HERINO R, IN PRESS J ELECTROCH

[8] HETERINGTON G, 1964, PHYS CHEM GLASSES-B, V5, P130

[9] FIPOS (FULL ISOLATION BY POROUS OXIDIZED SILICON) TECHNOLOGY AND ITS APPLICATION TO LSIS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (03) : 297 - 302

[10] A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICON [J]. SOLID-STATE ELECTRONICS, 1981, 24 (02) : 159 - &