PRECIPITATION AS THE PHENOMENON RESPONSIBLE FOR THE ELECTRICALLY INACTIVE PHOSPHORUS IN SILICON

被引：110
作者：
NOBILI, D
ARMIGLIATO, A
FINETTI, M
SOLMI, S
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 03期
关键词：
D O I：
10.1063/1.330646
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1484 / 1491
页数：8
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