TEMPERATURE-DEPENDENCE OF THE MOBILITY EDGE IN AMORPHOUS-SILICON

被引：16

作者：

PREMACHANDRAN, V

NARASIMHAN, KL

BAPAT, DR

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.29.7073

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7073 / 7075

页数：3

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