STUDY OF THERMAL SYMMETRY IN CZOCHRALSKI SILICON MELT UNDER A VERTICAL MAGNETIC-FIELD

被引：19

作者：

HIRATA, H

INOUE, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 08期

关键词：

D O I：

10.1143/JJAP.23.L527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L527 / L530

页数：4

共 10 条

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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L545 - L547
[7] HOSHIKAWA K, 1984, JPN J APPL PHYS, V23, pL38
[8] DIGITAL-SIMULATION OF MAGNETIC CZOCHRALSKI FLOW UNDER VARIOUS LABORATORY CONDITIONS FOR SILICON GROWTH
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LEE, KJ
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1983, 27 (03) : 281 - 284
[9] EXPERIMENTS ON THE INHIBITION OF THERMAL CONVECTION BY A MAGNETIC FIELD
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[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 240 (1220): : 108 - 113
[10] CZOCHRALSKI-TYPE CRYSTAL GROWTH IN TRANSVERSE MAGNETIC FIELDS
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