MIDWAVE INFRARED STIMULATED-EMISSION FROM A GAINSB/INAS SUPERLATTICE

被引：83

作者：

MILES, RH

CHOW, DH

ZHANG, YH

BREWER, PD

WILSON, RG

机构：

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 15期

关键词：

D O I：

10.1063/1.113277

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Use of a cracked Sb source and a postgrowth anneal procedure has been found to yield significant improvements in optical efficiencies of GaInSb/InAs superlattices grown by molecular beam epitaxy. Appreciable 5 μm band-to-band luminescence has been observed at room temperature, and stimulated emission at 3.2 μm has been demonstrated in an optically pumped structure. Intrinsic properties of this class of superlattices favor them for application as efficient infrared lasers operating at comparatively high temperatures.© 1995 American Institute of Physics.

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页码：1921 / 1923

页数：3

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