GROWTH AND XPS CHARACTERIZATION OF ANODIC TELLURIDE FILMS ON HG1-XCDXTE

被引：4
|
作者：
JAIN, M
NENER, BD
WARRINGTON, N
BAKER, MV
ROBINS, JL
FARAONE, L
机构：
[1] UNIV WESTERN AUSTRALIA,DEPT PHYS,PERTH,WA 6907,AUSTRALIA
[2] UNIV WESTERN AUSTRALIA,DEPT CHEM,PERTH,WA 6907,AUSTRALIA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1995年 / 142卷 / 07期
关键词：
D O I：
10.1149/1.2044324
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
An anodic tellurization process to grow native telluride films on Hg1-xCdxTe is described. This process requires two steps: first the growth of an anodic sulfide/oxide film and second the conversion of this film into an anodic telluride film. XPS studies suggest that the total conversion of the anodic sulfide/oxide film into an anodic telluride film is possible. The concentration of tellurium in the anodically grown telluride films can be controlled by controlling the concentration of sulfur and oxygen in the starting film.
引用
收藏
页码：2480 / 2485
页数：6
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