LOW DEFECT DENSITIES IN MOLECULAR-BEAM EPITAXIAL GAAS ACHIEVED BY ISOELECTRONIC IN DOPING

被引：59
作者：
BHATTACHARYA, PK
DHAR, S
BERGER, P
JUANG, FY
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 08期
关键词：
D O I：
10.1063/1.97119
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：470 / 472
页数：3
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