VERY HIGH-GAIN IN CARBON-DOPED BASE HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CHEMICAL BEAM EPITAXY

被引：25

作者：

BENCHIMOL, JL

ALEXANDRE, F

DUBONCHEVALLIER, C

HELIOT, F

BOURGUIGA, R

DANGLA, J

SERMAGE, B

机构：

[1] Frances-Telecom, Centre National d’Etude des Telecommunications, Laboratoire de Bagneux, F92220 Bagneux

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 14期

关键词：

BIPOLAR DEVICES; TRANSISTORS; EPITAXY AND EPITAXIAL GROWTH; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920853

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Current gains close to 200 are reported in carbon-doped base heterojunction bipolar transistors grown by chemical beam epitaxy, for base sheet resistance of 460 OMEGA/square. This result was made possible by the excellent quality of the carbon-doped GaAs layers, as demonstrated by the hole mobility and the minority carrier lifetime measurements.

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页码：1344 / 1345

页数：2

相关论文

共 15 条

[1] LPMOCVD GROWTH OF C-DOPED GAAS-LAYERS AND ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

ASHIZAWA, Y ;

NODA, T ;

MORIZUKA, K ;

ASAKA, M ;

OBARA, M .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :903-908

[2] CARBON-DOPED BASE GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION USING CARBON-TETRACHLORIDE AS A DOPANT SOURCE [J].

CUNNINGHAM, BT ;

STILLMAN, GE ;

JACKSON, GS .

APPLIED PHYSICS LETTERS, 1990, 56 (04) :361-363

[3] 1ST MICROWAVE CHARACTERIZATION OF LP-MOCVD GROWN GALNP/GAAS SELF-ALIGNED HBT [J].

DELAGE, SL ;

DIFORTEPOISSON, MA ;

BLANCK, H ;

BRYLINSKI, C ;

CHARTIER, E ;

COLLOT, P .

ELECTRONICS LETTERS, 1991, 27 (03) :253-254

[4] VERY HIGH-CARBON INCORPORATION IN METALORGANIC VAPOR-PHASE EPITAXY OF HEAVILY DOPED P-TYPE GAAS [J].

HANNA, MC ;

LU, ZH ;

MAJERFELD, A .

APPLIED PHYSICS LETTERS, 1991, 58 (02) :164-166

[5] MOCVD GROWN CARBON-DOPED GRADED-BASE ALGAAS-GAAS HBTS [J].

ITO, H .

ELECTRONICS LETTERS, 1990, 26 (23) :1977-1978

[6] CARBON-DOPED BASE ALGAAS GAAS HBTS GROWN BY MOCVD USING TMAS [J].

ITO, H ;

KOBAYASHI, T ;

ISHIBASHI, T .

ELECTRONICS LETTERS, 1989, 25 (19) :1302-1303

[7] HETEROSTRUCTURE BIPOLAR-TRANSISTOR EMPLOYING CARBON-DOPED BASE GROWN WITH TRIMETHYL-GA AND ARSINE [J].

KUO, TY ;

CHIU, TH ;

CUNNINGHAM, JE ;

GOOSSEN, KW ;

FONSTAD, CG ;

REN, F .

ELECTRONICS LETTERS, 1990, 26 (16) :1260-1262

[8] ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HEAVILY C-DOPED BASE LAYERS GROWN BY FLOW-RATE MODULATION EPITAXY [J].

MAKIMOTO, T ;

KOBAYASHI, N ;

ITO, H ;

ISHIBASHI, T .

APPLIED PHYSICS LETTERS, 1989, 54 (01) :39-41

[9] CARBON DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS FROM A HEATED GRAPHITE FILAMENT [J].

MALIK, RJ ;

NOTTENBERG, RN ;

SCHUBERT, EF ;

WALKER, JF ;

RYAN, RW .

APPLIED PHYSICS LETTERS, 1988, 53 (26) :2661-2663

[10] GAAS-ALGAAS HBT WITH CARBON DOPED BASE LAYER GROWN BY MOMBE [J].

REN, F ;

ABERNATHY, CR ;

PEARTON, SJ ;

FULLOWAN, TR ;

LOTHIAN, J ;

JORDAN, AS .

ELECTRONICS LETTERS, 1990, 26 (11) :724-725