HIGH-RESOLUTION ELECTRON-MICROSCOPY OF GROWTH INTERRUPTION EFFECT ON ALAS/GAAS INTERFACIAL STRUCTURE DURING MOLECULAR-BEAM EPITAXY

被引：27

作者：

IKARASHI, N

TANAKA, M

SAKAKI, H

ISHIDA, K

机构：

[1] Microelectronics Research Laboratories NEC Corporation, Tsukuba 305, 34, Miyukigaoka

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 11期

关键词：

D O I：

10.1063/1.107291

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Step structures at an AlAs/GaAs interface grown by molecular beam epitaxy (MBE) and the effects of growth interruption were investigated by high-resolution transmission electron microscopy (HRTEM) of the interface in the [110BAR] imaging orientation. In order to accomplish this, we developed a new TEM specimen preparation technique and determined an observation condition for HRTEM of the interface. Atomic steps were clearly observed at the AlAs-on-GaAs interface grown by conventional MBE, and the step intervals ranged from a few nm to several tens of nm. When 120 s growth interruption was employed, the interfacial steps were smoothed out and the step intervals become larger than several tens of nm.

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页码：1360 / 1362

页数：3

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