PHOTOLUMINESCENCE CHARACTERISTICS OF SE-DOPED GAINP/ALGAINP DOUBLE HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

The dependence of photoluminescence (PL) properties on carrier density in Se-doped double-heterostructure (DH), utilizing time-resolved PL, was reported. The carrier dependence correspond to cladding-layer carrier density. The behavior of the PL intensity according to the carrier density was observed for a carrier density below and above 2.5 × 1017 cm-3. The results obtained from this investigation implied that a nonradiative recombination process was predominant and that the crystal quality of the cladding layer decided the PL radiative efficiency for DH.