PHOTOLUMINESCENCE CHARACTERISTICS OF SE-DOPED GAINP/ALGAINP DOUBLE HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：4

作者：

TODA, A

NAKANO, K

YAMAMOTO, T

IKEDA, M

机构：

[1] Sony Corp Research Cent, Yokohama

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 25期

关键词：

D O I：

10.1063/1.113771

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dependence of photoluminescence (PL) properties on carrier density in Se-doped double-heterostructure (DH), utilizing time-resolved PL, was reported. The carrier dependence correspond to cladding-layer carrier density. The behavior of the PL intensity according to the carrier density was observed for a carrier density below and above 2.5 × 1017 cm-3. The results obtained from this investigation implied that a nonradiative recombination process was predominant and that the crystal quality of the cladding layer decided the PL radiative efficiency for DH.

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页码：3483 / 3485

页数：3

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