FORMATION OF AMORPHOUS INTERLAYERS BY SOLID-STATE DIFFUSION IN TI THIN-FILMS ON EPITAXIAL SI-GE LAYERS ON SILICON AND GERMANIUM

被引：13

作者：

LAI, JB ^{[1
]}

LIU, CS ^{[1
]}

CHEN, LJ ^{[1
]}

CHENG, JY ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 11期

关键词：

D O I：

10.1063/1.360474

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of amorphous interlayers (a-interlayers) by solid-state diffusion in ultrahigh-vacuum-deposited polycrystalline Ti thin film on germanium and epitaxial Si1-xGex (x=0.3, 0.4, and 0.7) alloys grown on (001)Si has been investigated by transmission electron microscopy and Auger electron spectroscopy. Amorphous interlayers, less than 2 nm in thickness, were observed to form in all as-deposited samples. The growth of the a-interlayers was found to vary nonmonotonically with the composition of Si-Ge alloys in annealed samples. On the other hand, the formation temperature of crystalline phase was found to decrease with the Ge content. The results are compared with those of the Ti/Si system. (C) 1995 American Institute of Physics.

引用

页码：6539 / 6542

页数：4

共 21 条

[1] DISORDERED INTERMIXING AT THE PLATINUM-SILICON INTERFACE DEMONSTRATED BY HIGH-RESOLUTION CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY, AUGER-ELECTRON SPECTROSCOPY, AND MEV ION CHANNELING [J].