STOCHASTIC-MODEL FOR GRAIN-SIZE VERSUS DOSE IN IMPLANTED AND ANNEALED POLYCRYSTALLINE SILICON FILMS ON SIO2

被引：44

作者：

IVERSON, RB

REIF, R

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 12期

关键词：

D O I：

10.1063/1.335251

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5169 / 5175

页数：7

共 7 条

[1] GRAIN-GROWTH STUDIES IN POLYSILICON BY AR-40 ION-IMPLANTATION AND THERMAL ANNEALING [J].

BHATTACHARYYA, A ;

RITZ, KN .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (09) :2143-2145

[2] CRYSTALLIZATION KINETICS OF AMORPHOUS-GERMANIUM [J].

GERMAIN, P ;

SQUELARD, S ;

BOURGOIN, J ;

GHEORGHIU, A .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :1909-1913

[3]

IVERSON RB, 1984, MATER RES SOC S P, V27, P543

[4] THE EFFECT OF GERMANIUM ION-IMPLANTATION DOSE ON THE AMORPHIZATION AND RECRYSTALLIZATION OF POLYCRYSTALLINE SILICON FILMS [J].

KOMEM, Y ;

HALL, IW .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6655-6658

[5] LOW-TEMPERATURE PROCESS TO INCREASE THE GRAIN-SIZE IN POLYSILICON FILMS [J].

REIF, R ;

KNOTT, JE .

ELECTRONICS LETTERS, 1981, 17 (17) :586-588

[6] GRAIN-GROWTH MECHANISM OF HEAVILY PHOSPHORUS-IMPLANTED POLYCRYSTALLINE SILICON [J].

WADA, Y ;

NISHIMATSU, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) :1499-1504

[7] CRYSTALLIZATION IN AMORPHOUS-SILICON [J].

ZELLAMA, K ;

GERMAIN, P ;

SQUELARD, S ;

BOURGOIN, JC ;

THOMAS, PA .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :6995-7000

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