ELECTRON-HOLE DROPS IN GE-SI ALLOYS

被引：13
作者：
BENOITALAGUILLA, C
VOOS, M
PETROFF, Y
机构：
[1] UNIV PARIS 7, ECOLE NORMALE SUPER,CNRS,GRP PHYSI SOLIDES, PARIS, FRANCE
[2] UNIV PARIS 06, CNRS,LAB PHYS SOLIDES, PARIS, FRANCE
来源：
PHYSICAL REVIEW B | 1974年 / 10卷 / 12期
关键词：
FREE-EXCITONS; AUGER-RECOMBINATION; OPTICAL-ABSORPTION; GERMANIUM; SILICON; CONDENSATION; LUMINESCENCE; TEMPERATURE; RADIATION; DROPLETS;
D O I：
10.1103/PhysRevB.10.4995
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4995 / 5002
页数：8
相关论文
共 43 条
[1]   AUGER-RECOMBINATION IN SI [J].
BECK, JD ;
CONRADT, R .
SOLID STATE COMMUNICATIONS, 1973, 13 (01) :93-95
[2]   LUMINESCENCE LINE SHAPE OF FREE EXCITONS IN PURE GE [J].
BENOITAL.C ;
VOOS, M .
SOLID STATE COMMUNICATIONS, 1973, 12 (12) :1257-1260
[3]  
BENOITAL.C, 1971, PHYS REV LETT, V27, P1214, DOI 10.1103/PhysRevLett.27.1214
[4]  
BENOITAL.C, 1973, PHYS REV B, V7, P1723, DOI 10.1103/PhysRevB.7.1723
[5]   CONDENSATION OF FREE EXCITONS INTO ELECTRON-HOLE DROPS IN PURE GERMANIUM [J].
BENOITAL, C ;
VOOS, M ;
SALVAN, F .
PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (08) :3079-+
[6]   ELECTRON-HOLE DROPS IN DOPED GE [J].
BENOITAL.C ;
VOOS, M .
SOLID STATE COMMUNICATIONS, 1972, 11 (11) :1585-+
[7]  
BENOITALAGUILLA.C, UNPUB
[8]  
Bobrova E. A., 1971, Fizika Tverdogo Tela, V13, P3528
[9]  
BOBROVA EA, 1972, SOV PHYS-SOLID STATE, V13, P2983
[10]   INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J].
BRAUNSTEIN, R ;
MOORE, AR ;
HERMAN, F .
PHYSICAL REVIEW, 1958, 109 (03) :695-710
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