QUANTUM CONFINEMENT OF HOLES IN SI1-XGEX/SI QUANTUM-WELLS STUDIED BY ADMITTANCE SPECTROSCOPY

被引：9
|
作者：
LU, F [1 ]
JIANG, JY [1 ]
SUN, HH [1 ]
GONG, DW [1 ]
ZHANG, XG [1 ]
WANG, X [1 ]
机构：
[1] FUDAN UNIV,SURFACE PHYS LAB,SHANGHAI,PEOPLES R CHINA
来源：
PHYSICAL REVIEW B | 1995年 / 51卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.51.4213
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A carrier thermal-emission model is presented to analyze the emission and capture of carriers in the admittance spectroscopy of Si/Si1-xGex/Si quantum wells. The experimental activation energy is related to the band offset at the interface of the SiGe well and the Si barrier as well as the confined hole-energy level in the well. The measured band offset for a single quantum well with Ge content of 0.33 is much closer to the theoretical prediction than that derived from the equivalent circuit model. The quantum size effects for both single-quantum-well and multiple-quantum-well samples are clearly revealed by the peak shifts of the conductance spectra. The emissions of holes from the confined heavy-hole subband and the light-hole subband in multiple-quantum-well samples with small well widths appear as a distinct doublet in the conductance spectra. © 1995 The American Physical Society.
引用
收藏
页码：4213 / 4217
页数：5
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