RECOMBINATION VELOCITY AT MOLECULAR-BEAM-EPITAXIAL GAAS REGROWN INTERFACES

被引：6
|
作者：
BISWAS, D [1 ]
BERGER, PR [1 ]
BHATTACHARYA, P [1 ]
机构：
[1] UNIV MICHIGAN, DEPT ELECT ENGN & COMP SCI, CTR HIGH FREQUENCY MICROELECTR, ANN ARBOR, MI 48109 USA
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期
关键词：
D O I：
10.1063/1.342786
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2571 / 2573
页数：3
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