RECOMBINATION VELOCITY AT MOLECULAR-BEAM-EPITAXIAL GAAS REGROWN INTERFACES

被引：6

作者：

BISWAS, D ^{[1
]}

BERGER, PR ^{[1
]}

BHATTACHARYA, P ^{[1
]}

机构：

[1] UNIV MICHIGAN, DEPT ELECT ENGN & COMP SCI, CTR HIGH FREQUENCY MICROELECTR, ANN ARBOR, MI 48109 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.342786

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2571 / 2573

页数：3

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