RECOMBINATION VELOCITY AT MOLECULAR-BEAM-EPITAXIAL GAAS REGROWN INTERFACES

被引：6
|
作者：
BISWAS, D [1 ]
BERGER, PR [1 ]
BHATTACHARYA, P [1 ]
机构：
[1] UNIV MICHIGAN, DEPT ELECT ENGN & COMP SCI, CTR HIGH FREQUENCY MICROELECTR, ANN ARBOR, MI 48109 USA
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期
关键词：
D O I：
10.1063/1.342786
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2571 / 2573
页数：3
相关论文
共 50 条
  • [21] ATOMISTIC NUMERICAL STUDY OF MOLECULAR-BEAM-EPITAXIAL GROWTH-KINETICS
    MARMORKOS, IK
    DASSARMA, S
    PHYSICAL REVIEW B, 1992, 45 (19): : 11262 - 11272
  • [22] MOLECULAR-BEAM-EPITAXIAL GROWTH AND CHARACTERIZATION OF IN2 TE3
    GOLDING, TD
    BOYD, PR
    MARTINKA, M
    AMIRTHARAJ, PM
    DINAN, JH
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (05) : 1936 - 1941
  • [23] A CRITICAL-EXAMINATION OF THE MOLECULAR-BEAM-EPITAXIAL GROWTH OF INXGA1-XAS/GAAS STRAINED QUANTUM WELL STRUCTURES
    PAMULAPATI, J
    OH, JE
    DEBBAR, N
    BHATTACHARYA, P
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) : 1361 - 1363
  • [24] MOLECULAR-BEAM EPITAXIAL-GROWTH OF (AL,GA) AS/GAAS HETEROSTRUCTURES WITH INTERRUPTION AT INTERFACES
    TU, CW
    MILLER, RC
    WILSON, BA
    PETROFF, PM
    HARRIS, TD
    KOPF, RF
    SPUTZ, SK
    LAMONT, MG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 716 - 717
  • [25] CARBON IN MOLECULAR-BEAM EPITAXIAL GAAS
    STRINGFELLOW, GB
    STALL, R
    KOSCHEL, W
    APPLIED PHYSICS LETTERS, 1981, 38 (03) : 156 - 157
  • [26] INTERFACE ANALYSIS OF DRY-ETCHED AND MOLECULAR-BEAM EPITAXIAL REGROWN ALGAAS
    GROBER, LH
    HONG, M
    MANNAERTS, JP
    FREUND, RS
    LUFTMAN, HS
    CHU, SNG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1038 - 1042
  • [27] Dependence of the interface sharpness of a Ge single quantum well on molecular-beam-epitaxial growth conditions
    1600, American Inst of Physics, Woodbury, NY, USA (76):
  • [28] MOLECULAR-BEAM EPITAXIAL GAAS LAYERS FOR MESFETS
    WOOD, CEC
    APPLIED PHYSICS LETTERS, 1976, 29 (11) : 746 - 748
  • [29] ERBIUM DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS
    SMITH, RS
    MULLER, HD
    ENNEN, H
    WENNEKERS, P
    MAIER, M
    APPLIED PHYSICS LETTERS, 1987, 50 (01) : 49 - 51
  • [30] In-situ etch to improve chemical beam epitaxy regrown AlGaAs/GaAs interfaces for HBT applications
    Hsin, YM
    Li, NY
    Tu, CW
    Asbeck, PM
    CONTROL OF SEMICONDUCTOR SURFACES AND INTERFACES, 1997, 448 : 87 - 92
12345