RECOMBINATION VELOCITY AT MOLECULAR-BEAM-EPITAXIAL GAAS REGROWN INTERFACES

被引：6
|
作者：
BISWAS, D [1 ]
BERGER, PR [1 ]
BHATTACHARYA, P [1 ]
机构：
[1] UNIV MICHIGAN, DEPT ELECT ENGN & COMP SCI, CTR HIGH FREQUENCY MICROELECTR, ANN ARBOR, MI 48109 USA
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期
关键词：
D O I：
10.1063/1.342786
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2571 / 2573
页数：3
相关论文
共 50 条
  • [1] Deep traps in molecular-beam-epitaxial GaAs grown at low temperatures
    Look, D.C.
    Fang, Z.-Q.
    Yamamoto, H.
    Sizelove, J.R.
    Mier, M.G.
    Stutz, C.E.
    1600, American Inst of Physics, Woodbury, NY, USA (76):
  • [2] DEEP TRAPS IN MOLECULAR-BEAM-EPITAXIAL GAAS GROWN AT LOW-TEMPERATURES
    LOOK, DC
    FANG, ZQ
    YAMAMOTO, H
    SIZELOVE, JR
    MIER, MG
    STUTZ, CE
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (02) : 1029 - 1032
  • [3] Molecular-beam-epitaxial growth of Ga1-xInxSb on GaAs substrates
    Roslund, JH
    Zsebok, O
    Swenson, G
    Andersson, TG
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 883 - 887
  • [4] Molecular-beam-epitaxial growth of Ga1-xInxSb on GaAs substrates
    Roslund, J.H.
    Zsebok, O.
    Swenson, G.
    Andersson, T.G.
    Journal of Crystal Growth, 1997, 175-176 (pt 2): : 883 - 887
  • [5] GROWTH-PARAMETER DEPENDENCE OF DEEP LEVELS IN MOLECULAR-BEAM-EPITAXIAL GAAS
    STALL, RA
    WOOD, CEC
    KIRCHNER, PD
    EASTMAN, LF
    ELECTRONICS LETTERS, 1980, 16 (05) : 171 - 172
  • [6] Recombination velocity at oxide-GaAs interfaces fabricated by in situ molecular beam epitaxy
    Passlack, M
    Hong, M
    Mannaerts, JP
    Kwo, JR
    Tu, LW
    APPLIED PHYSICS LETTERS, 1996, 68 (25) : 3605 - 3607
  • [7] Extrinsic and intrinsic defects at molecular-beam-epitaxy regrown GaAs interfaces
    Ky, NH
    Martin, D
    Reinhart, FK
    PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 729 - 732
  • [8] INTERBAND-TRANSITIONS IN MOLECULAR-BEAM-EPITAXIAL ALXGA1-XAS/GAAS
    AUBEL, JL
    REDDY, UK
    SUNDARAM, S
    BEARD, WT
    COMAS, J
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 495 - 498
  • [9] THALLIUM INCORPORATION IN MOLECULAR-BEAM-EPITAXIAL INSB
    WOOD, CEC
    NOREIKA, A
    FRANCOMBE, M
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) : 3610 - 3612
  • [10] EFFECTS OF RAPID THERMAL-PROCESSING ON ELECTRON TRAPS IN MOLECULAR-BEAM-EPITAXIAL GAAS
    KITAGAWA, A
    USAMI, A
    WADA, T
    TOKUDA, Y
    KANO, H
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (02) : 606 - 611
12345