POLARITY-DEPENDENT MEMORY SWITCHING AND BEHAVIOR OF AG DENDRITE IN AG-PHOTODOPED AMORPHOUS AS2S3 FILMS

被引：151

作者：

HIROSE, Y ^{[1
]}

HIROSE, H ^{[1
]}

机构：

[1] NIPPON INST TECHNOL,DEPT ELECT ENGN,MINAMI,SAITAMA 345,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 06期

关键词：

D O I：

10.1063/1.322942

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2767 / 2772

页数：6

共 12 条

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[9] SWITCHING AND POLARITY-DEPENDENT MEMORY EFFECTS IN SE-SNO2 AND SE-IN2O3 THIN-FILM DEVICES [J].

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