NEW METHOD FOR EXTRACTING COLLECTOR SERIES RESISTANCE OF BIPOLAR-TRANSISTORS

被引：5

作者：

VERZELLESI, G

TURETTA, R

CAPPELLIN, M

PAVAN, P

CHANTRE, A

ZANONI, E

机构：

[1] Dipartimento di Elettronica ed Informatica, Universita di Padova, 35131 Padova

[2] France Telecom, CNET/CNS, BP98

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 10期

关键词：

BIPOLAR TRANSISTORS; RESISTANCE; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19930621

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new technique for extracting the collector series resistance of bipolar transistors is presented. The method is based on impact-ionisation-induced base current reversal and provides the value which the collector resistance assumes in the forward active region of operation.

引用

页码：931 / 933

页数：3

共 9 条

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