PHOTOCURRENT MULTIPLICATION IN AMORPHOUS-SILICON CARBIDE FILMS

被引：15
作者：
HIRAMOTO, M
YOSHIMURA, K
NAKAYAMA, Y
AKITA, S
KAWAMURA, T
YOKOYAMA, M
机构：
[1] OSAKA UNIV,FAC ENGN,SUITA,OSAKA 565,JAPAN
[2] UNIV OSAKA PREFECTURE,DEPT ELECT ENGN,SAKAI,OSAKA 591,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 16期
关键词：
D O I：
10.1063/1.106160
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The photocurrent multiplication reaching 300 times was recently observed in amorphous silicon carbide (a-SiC:H) films using a simple cell configuration of SnO2/a-SiC:H/Au. This phenomenon, which appeared only under the irradiation of bulk-absorbed red light, is not due to Avalanche effects, but is thought to result from electron tunneling from SnO2 to a-SiC:H film through a thin insulating thin silicon oxide layer formed at the a-SiC:H/SnO2 interface in a high electric field built up by the photoaccumulated space charges of trapped holes near the interface.
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页码：1992 / 1994
页数：3
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