未找到相关数据
INTERLAYER T-X SCATTERING IN STAGGERED-ALIGNMENT ALGAAS-ALAS TERNARY ALLOY MULTI-QUANTUM-WELL STRUCTURES
被引：2
|作者：
MASUMOTO, Y
MISHINA, T
SASAKI, F
机构：
[1] Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki
关键词：
Electrons--Scattering - Luminescence - Semiconducting Aluminum Compounds - Spectroscopy;
Absorption;
D O I：
10.1016/0022-2313(90)90141-W
中图分类号：
O43 [光学];
学科分类号：
070207 ;
0803 ;
摘要：
The interlayer Γ-X scattering rate of photoexcited electrons was measured in staggered-alignment type II AlGaAs-AlAs ternary alloy multi-quantum-well structures. The scattering process was directly probed by the femtosecond pump-and-probe spectroscopy. The mean Γ-X scattering time of electrons across the interface at 4.2 K was determined to be 1.0-1.2 ps, which is longer than that observed recently in GaAs-AlAs short period superlattices and is 20 times longer than that observed in bulk GaAs. The slowing mechanism is ascribed to the small penetration of the evanescent Γ electrons into the AlAs barrier layers. © 1990.
引用
收藏
页码：189 / 191
页数：3
相关论文