共 50 条
[43]
INVESTIGATION OF DEPENDENCE OF LUMINESCENCE EMITTED BY N-TYPE AND P-TYPE GAPXAS1-X AND ALXGA1-XAS SOLID-SOLUTIONS ON THEIR COMPOSITION
[J].
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1973, 6 (10)
:1620-1625
[44]
INVESTIGATION OF SOME PHYSICAL-PROPERTIES OF GAAS MONOCRYSTALS AND ALXGA1-XAS SOLID-SOLUTIONS BY PHOTO-LUMINESCENCE AND CATHODE-LUMINESCENCE METHODS
[J].
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA,
1977, (03)
:117-121
[45]
PHOTO-LUMINESCENCE STUDY OF ACCEPTORS IN ALXGA1-XAS
[J].
JOURNAL OF APPLIED PHYSICS,
1982, 53 (07)
:5163-5168
[46]
MAGNETOTUNNELING FROM ACCUMULATION LAYERS IN ALXGA1-XAS CAPACITORS
[J].
PHYSICAL REVIEW B,
1985, 32 (10)
:6531-6543
[47]
DEPENDENCE OF EFFICIENCY OF RADIATIVE TRANSITIONS ON COMPOSITION OF DIRECT-GAP N-TYPE AND P-TYPE ALXGA1-XAS SOLID-SOLUTIONS
[J].
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1977, 11 (03)
:278-281
[48]
Study of PV characteristics of AlxGa1-xAs/GaAs photodiodes
[J].
19TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS,
2018, 993
[49]
OPTICAL-PROPERTIES OF MANGANESE IN ALXGA1-XAS (O LESS-THAN-OR-EQUAL-TO X LESS-THAN 0.3) SOLID-SOLUTIONS
[J].
SOVIET PHYSICS SEMICONDUCTORS-USSR,
1987, 21 (05)
:475-479