TEMPERATURE-DEPENDENT FIELD-EFFECT CONDUCTANCE IN A-SI-H

被引：11
作者：
JANG, J [1 ]
LEE, C [1 ]
机构：
[1] KOREA ADV INST SCI & TECHNOL,DEPT PHYS,SEOUL 131,SOUTH KOREA
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期
关键词：
D O I：
10.1016/0022-3093(83)90576-8
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：281 / 284
页数：4
相关论文
共 5 条
[1]   ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J].
GOODMAN, NB ;
FRITZSCHE, H .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01) :149-165
[2]   EFFECT OF DISCHARGE CONDITIONS ON CHARACTERISTICS OF HYDROGENATED AMORPHOUS-SILICON DEPOSITED BY DC GLOW-DISCHARGE DECOMPOSITION [J].
JANG, J ;
LEE, C .
SOLAR ENERGY MATERIALS, 1982, 7 (03) :377-384
[3]  
KIM DH, 1982, NEW PHYS, V21, P207
[4]  
TSANG T, 1979, PHYS REV, V198, P3027
[5]   PSEUDOGAP STATE DENSITY IN SPUTTERED A-SI-H FROM FIELD-EFFECT AND CAPACITANCE MEASUREMENTS [J].
WEISFIELD, R ;
VIKTOROVITCH, P ;
ANDERSON, DA ;
PAUL, W .
APPLIED PHYSICS LETTERS, 1981, 39 (03) :263-265
1