CONTACTS TO DOPED AND UNDOPED POLYCRYSTALLINE DIAMOND FILMS

被引：12

作者：

HARPER, RE

JOHNSTON, C

CHALKER, PR

TOTTERDELL, D

BUCKLEYGOLDER, IM

WERNER, M

OBERMEIER, E

VANROSSUM, M

机构：

[1] HARWELL LAB, AEA TECHNOL, DIDCOT OX11 0RA, OXON, ENGLAND

[2] TECH UNIV BERLIN, W-1000 BERLIN 65, GERMANY

[3] IMEC, B-3030 LOUVAIN, BELGIUM

来源：

DIAMOND AND RELATED MATERIALS | 1992年 / 1卷 / 5-6期

关键词：

D O I：

10.1016/0925-9635(92)90193-R

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the use of various metals (Al, Au, Ti and Ti/Au double layers) for use as contacts to doped and undoped diamond films. I-V and C-V measurements have been made at room temperature and above. All the metals show rectifying behaviour on undoped films, and near-Ohmic behaviour on doped films. Physical analysis (XRD, SIMS and XPS) indicates that the Ti/Au system is unstable at temperatures as low as 450°C, and therefore cannot be considered as a reliable metallisation scheme for diamond devices. © 1992.

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页码：692 / 696

页数：5

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