IMPROVED CHARGE COLLECTION OF THE BURIED P-I-N A-SI-H RADIATION DETECTORS

被引：1

作者：

FUJIEDA, I ^{[1
]}

CHO, G ^{[1
]}

CONTI, M ^{[1
]}

DREWERY, J ^{[1
]}

KAPLAN, SN ^{[1
]}

PEREZMENDEZ, V ^{[1
]}

QURESHI, S ^{[1
]}

STREET, RA ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1990年 / 37卷 / 02期

关键词：

17;

D O I：

10.1109/23.106603

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charge collection in hydrogenated amorphous silicon (a-Si:H) radiation detectors is improved for high LET particle detection by adding thin intrinsic layers to the usual p-i-n structure. This buried p-i-n structure enables us to apply higher bias and the electric field is enhanced. When irradiated by 5.8 MeV α particles, the 5.7 µm thick buried p-i-n detector with bias 300V gives a signal size of 60,000 electrons, compared to about 20,000 electrons with the simple p-i-n detectors. The improved charge collection in the new structure is discussed. The capability of tailoring the field profile by doping a-Si:H opens a way to some interesting device structures. Copyright © 1990 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：124 / 128

页数：5