FIELD-INDUCED ENERGY SHIFT OF EXCITONIC ABSORPTION IN INGAAS INP MULTIQUANTUM WELLS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY

被引：15
作者：
NOJIMA, S
KAWAGUCHI, Y
NAKASHIMA, K
WAKITA, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1987年 / 26卷 / 11期
关键词：
D O I：
10.1143/JJAP.26.1927
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1927 / 1928
页数：2
相关论文
共 13 条
[1]   ELECTRONIC-STRUCTURE OF AN ISOLATED GAAS-GAALAS QUANTUM WELL IN A STRONG ELECTRIC-FIELD [J].
AUSTIN, EJ ;
JAROS, M .
PHYSICAL REVIEW B, 1985, 31 (08) :5569-5572
[2]   QUANTUM-CONFINED STARK-EFFECT IN INGAAS INP QUANTUM-WELLS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
BARJOSEPH, I ;
KLINGSHIRN, C ;
MILLER, DAB ;
CHEMLA, DS ;
KOREN, U ;
MILLER, BI .
APPLIED PHYSICS LETTERS, 1987, 50 (15) :1010-1012
[3]   VARIATIONAL CALCULATIONS ON A QUANTUM WELL IN AN ELECTRIC-FIELD [J].
BASTARD, G ;
MENDEZ, EE ;
CHANG, LL ;
ESAKI, L .
PHYSICAL REVIEW B, 1983, 28 (06) :3241-3245
[4]   HIGH-TEMPERATURE OBSERVATION OF HEAVY-HOLE AND LIGHT-HOLE EXCITONS IN INGAAS/INP MULTIPLE QUANTUM-WELL STRUCTURES GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].
KAWAGUCHI, Y ;
ASAHI, H .
APPLIED PHYSICS LETTERS, 1987, 50 (18) :1243-1245
[5]   MEASUREMENT OF HETEROJUNCTION BAND OFFSETS BY ADMITTANCE SPECTROSCOPY - INP/GA0.47IN0.53AS [J].
LANG, DV ;
PANISH, MB ;
CAPASSO, F ;
ALLAM, J ;
HAMM, RA ;
SERGENT, AM ;
TSANG, WT .
APPLIED PHYSICS LETTERS, 1987, 50 (12) :736-738
[6]   EXCITON ELECTROABSORPTION AT ROOM-TEMPERATURE IN INGAAS/INP MULTIQUANTUM-WELL STRUCTURES GROWN BY ATMOSPHERIC-PRESSURE MOCVD [J].
MOSELEY, AJ ;
SCOTT, MD ;
WILLIAMS, PJ ;
WALLIS, RH ;
DAVIES, JI ;
RIFFAT, JR .
ELECTRONICS LETTERS, 1987, 23 (10) :516-518
[7]  
NOJIMA S, IN PRESS J APPL PHYS
[8]   GAS SOURCE MOLECULAR-BEAM EPITAXY OF GAINAS(P) - GAS SOURCES, SINGLE QUANTUM-WELLS, SUPERLATTICE P-I-NS AND BIPOLAR-TRANSISTORS [J].
PANISH, MB .
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :249-260
[9]   PHOTOCURRENT RESPONSE OF GAINAS/INP MULTIPLE QUANTUM WELL DETECTORS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].
TEMKIN, H ;
PANISH, MB ;
LOGAN, RA .
APPLIED PHYSICS LETTERS, 1985, 47 (09) :978-980
[10]   INGAASP INP QUANTUM-WELL MODULATORS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].
TEMKIN, H ;
GERSHONI, D ;
PANISH, MB .
APPLIED PHYSICS LETTERS, 1987, 50 (25) :1776-1778
12