MOLECULAR-BEAM EPITAXIAL DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGH-CURRENT GAINS

被引：6

作者：

SU, SL ^{[1
]}

LYONS, WG ^{[1
]}

TEJAYADI, O ^{[1
]}

FISCHER, R ^{[1
]}

KOPP, W ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 04期

关键词：

D O I：

10.1049/el:19830090

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：128 / 129

页数：2

共 10 条

[1]

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[2]

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[5] (GAAL)AS-GAAS HETEROJUNCTION PHOTOTRANSISTORS WITH HIGH-CURRENT GAIN [J].

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[6] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

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PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[7]

KROEMER H, 1959, P IRE, V45, P1535

[8]

MCLEVIGE WV, 1982, IEEE ELECTRON DEVICE, V3, P43

[9] INTERFACIAL PROPERTIES OF (AL,GA)AS/GAAS STRUCTURES - EFFECT OF SUBSTRATE-TEMPERATURE DURING GROWTH BY MOLECULAR-BEAM EPITAXY [J].

MORKOC, H ;

DRUMMOND, TJ ;

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JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1030-1033

[10]

Yuan H. T., 1982, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1982, P100

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