OBSERVATION OF AN ANOMALOUSLY HIGH ETCH RATE IN PLASMA-ENHANCED CVD SILICON-NITRIDE FILMS

被引：2

作者：

LING, CH

KWOK, CY

PRASAD, K

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 84卷 / 01期

关键词：

D O I：

10.1002/pssa.2210840144

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K1 / K4

页数：4

共 7 条

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[4]

LANDFORD WA, 1978, J APPL PHYS, V49, P2473

[5] REACTIVE PLASMA DEPOSITED SI-N FILMS FOR MOS-LSI PASSIVATION [J].

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LEVINSTEIN, HJ ;

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QUINTANA, G ;

HASZKO, SE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) :601-608

[6] PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE [J].

STEIN, HJ ;

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[7]

WEISS AD, 1983, SEMICOND INT JUL, P88

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