STRUCTURAL EVOLUTION OF VERY THIN SILICON-OXIDE FILMS DURING THERMAL GROWTH IN DRY OXYGEN

被引：30
作者：
AGIUS, B
RIGO, S
ROCHET, F
FROMENT, M
MAILLOT, C
ROULET, H
DUFOUR, G
机构：
[1] UNIV PARIS 06, F-75230 PARIS 05, FRANCE
[2] LAB CHIM PHYS 176, F-75231 PARIS 05, FRANCE
来源：
APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 01期
关键词：
D O I：
10.1063/1.94547
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：48 / 50
页数：3
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