HYBRID MOLECULAR-BEAM EPITAXY LOW-TEMPERATURE LIQUID-PHASE EPITAXY GROWTH OF GAAS (ALGAAS) LAYERS ON SI

被引：1

作者：

BALDUS, A ^{[1
]}

BETT, A ^{[1
]}

SULIMA, OV ^{[1
]}

WETTLING, W ^{[1
]}

机构：

[1] FRAUNHOFER INST SOLAR ENERGY SYST,OLTMANNSSTR 5,D-79100 FREIBURG,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 141卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(94)90232-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Low-temperature (T < 400-degrees-C) liquid-phase epitaxy (LPE) from Sn-based melt, followed at higher temperatures by LPE from Ga-based melts, showed to be promising for the growth of GaAs (AlGaAs) layers on Si substrates covered by molecular beam epitaxially grown GaAs. Planar growth without microcracks and dissolution defects was achieved. Diffusion length of minority carriers of L = 1.35 mum and dislocation density of N(d) = 7 x 10(6)cm-2 were obtained.

引用

页码：315 / 323

页数：9

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