ENHANCEMENT-MODE AND DEPLETION-MODE PARA-CHANNEL GEXSI1-X MODULATION-DOPED FETS

被引：129

作者：

PEARSALL, TP

BEAN, JC

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 05期

关键词：

D O I：

10.1109/EDL.1986.26383

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：308 / 310

页数：3

共 9 条

[1]

Abe M., 1982, IEEE T ELECTRON DEV, V29, P1088, DOI 10.1109/T-ED.1982.20838

[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

FELDMAN, LC ;

FIORY, AT ;

NAKAHARA, S ;

ROBINSON, IK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440

[3]

DAEMBKES H, 1985, DEC IEDM, P768

[4] THERMAL RELAXATION OF METASTABLE STRAINED-LAYER GEXSI1-X/SI EPITAXY [J].

FIORY, AT ;

BEAN, JC ;

HULL, R ;

NAKAHARA, S .

PHYSICAL REVIEW B, 1985, 31 (06) :4063-4065

[5] DIRECT-COUPLED GAAS RING OSCILLATORS WITH SELF-ALIGNED GATES [J].

KIEHL, RA ;

FLAHIVE, PG ;

WEMPLE, SH ;

COX, HM .

ELECTRON DEVICE LETTERS, 1982, 3 (11) :325-326

[6]

NAGEL LW, 1980, 1980 P INT S CIRC SY

[7] TWO-DIMENSIONAL ELECTRONIC SYSTEMS FOR HIGH-SPEED DEVICE APPLICATIONS [J].

PEARSALL, TP .

SURFACE SCIENCE, 1984, 142 (1-3) :529-544

[8]

PEARSALL TP, 1985, 1ST P INT S SIL MOL, P400

[9] MODULATION DOPING IN GEXSI1-X/SI STRAINED LAYER HETEROSTRUCTURES [J].

PEOPLE, R ;

BEAN, JC ;

LANG, DV ;

SERGENT, AM ;

STORMER, HL ;

WECHT, KW ;

LYNCH, RT ;

BALDWIN, K .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1231-1233

← 1 →