CONCENTRATION OF ELECTRONS IN SELECTIVELY DOPED GAALAS/GAAS HETEROJUNCTION AND ITS DEPENDENCE ON SPACER-LAYER THICKNESS AND GATE ELECTRIC-FIELD

被引：86
作者：
HIRAKAWA, K
SAKAKI, H
YOSHINO, J
机构：
来源：
APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 03期
关键词：
D O I：
10.1063/1.95202
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：253 / 255
页数：3
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