BIAS DEPENDENCE AND LIGHT SENSITIVITY OF (AL,GA)AS/GAAS MODFETS AT 77-K

被引:68
作者
DRUMMOND, TJ
FISCHER, RJ
KOPP, WF
MORKOC, H
LEE, K
SHUR, MS
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[2] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455
关键词
D O I
10.1109/T-ED.1983.21449
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1806 / 1811
页数:6
相关论文
共 21 条
[1]   METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J].
DELAGEBEAUDEUF, D ;
LINH, NT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) :955-960
[2]   TRANSPORT IN MODULATION-DOPED STRUCTURES (ALXGA1-XAS/GAAS) AND CORRELATIONS WITH MONTE-CARLO CALCULATIONS (GAAS) [J].
DRUMMOND, TJ ;
KOPP, W ;
MORKOC, H ;
KEEVER, M .
APPLIED PHYSICS LETTERS, 1982, 41 (03) :277-279
[3]   PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES [J].
DRUMMOND, TJ ;
KOPP, W ;
FISCHER, R ;
MORKOC, H ;
THORNE, RE ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1238-1240
[4]   MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J].
DRUMMOND, TJ ;
MORKOC, H ;
LEE, K ;
SHUR, M .
ELECTRON DEVICE LETTERS, 1982, 3 (11) :338-341
[5]   CHARACTERISTICS OF MODULATION-DOPED ALXGA1-XAL/GAAS FIELD-EFFECT TRANSISTORS - EFFECT OF DONOR-ELECTRON SEPARATION [J].
DRUMMOND, TJ ;
FISCHER, R ;
SU, SL ;
LYONS, WG ;
MORKOC, H ;
LEE, K ;
SHUR, MS .
APPLIED PHYSICS LETTERS, 1983, 42 (03) :262-264
[6]  
DRUMMOND TJ, 1982, ELECTRON LETT, V18, P794
[7]  
FISCHER R, 1982, I PHYS C SER, V65, P157
[8]   FIELD-INDUCED REEMISSION OF ELECTRONS TRAPPED IN SIO2 [J].
FORBES, L ;
SUN, E ;
ALDERS, R ;
MOLL, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1816-1818
[9]  
FRARY JM, 1981, SEMICOND INT, V4, P72
[10]   PERSISTENT PHOTOCONDUCTIVITY IN (AL,GA)AS/GAAS MODULATION DOPED STRUCTURES - DEPENDENCE ON STRUCTURE AND GROWTH TEMPERATURE [J].
KLEM, J ;
MASSELINK, WT ;
ARNOLD, D ;
FISCHER, R ;
DRUMMOND, TJ ;
MORKOC, H ;
LEE, K ;
SHUR, MS .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5214-5217