RESIDUAL DEFECTS IN HIGH-ENERGY B-IMPLANTED, P-IMPLANTED AND AS-IMPLANTED SI BY RAPID THERMAL ANNEALING

被引：6
|
作者：
TAMURA, M
OHYU, K
机构：
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 49卷 / 02期
关键词：
D O I：
10.1007/BF00616293
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：149 / 155
页数：7
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