STUDIES OF COMPOUND FORMATION AT CU-IN, AG-IN AND AU-IN INTERFACES WITH PERTURBED GAMMA-GAMMA-ANGULAR CORRELATIONS

The 0 behavior of the thin metal film couples Cu/In, 0 and Au/In was studied using the perturbed gamma - gamma angular correlation method. Formation of interface compounds CuIn//2, AgIn//2 35 and AuIn//2 was observed above temperatures T of 240 K, 220 K and 260 K respectively. The CuIn//2 and AgIn//2 compounds start to decompose above temperatures of 440 K and 460 K, though for AuIn//2 no decomposition was observed up to 550 K. Isothermal annealing of the film couples yielded a square root of time behavior for the average interface compound thickness, which supports the assumption of a diffusion-controlled growth mechanism. Diffusion constants D//0 and activation energies E//a are evaluated from an Arrhenius plot.