INSITU STM IMAGING OF N-GAAS DURING ANODIC PHOTOCORROSION

被引：23

作者：

ERIKSSON, S ^{[1
]}

CARLSSON, P ^{[1
]}

HOLMSTROM, B ^{[1
]}

UOSAKI, K ^{[1
]}

机构：

[1] HOKKAIDO UNIV,FAC SCI,DEPT CHEM,SAPPORO,HOKKAIDO 060,JAPAN

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1991年 / 313卷 / 1-2期

关键词：

D O I：

10.1016/0022-0728(91)85175-O

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Scanning tunnelling microscopy was used to make a real-time, in-situ study of the changes of the surface topography during the anodic photocorrosion of n-GaAs (100) surfaces. To find suitable conditions for such studies, the semiconductor potential was scanned with the tip held at a fixed potential and at a fixed position. The recorded images show a clear photocorrosion process, where the surface roughness increases with time.

引用

页码：121 / 128

页数：8

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