GROWTH OF GAXIN1-XAS AND GAXIN1-XASYP1-Y USING PREFORMED ADDUCTS

被引：14

作者：

MOSS, RH

SPURDENS, PC

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 01期

关键词：

D O I：

10.1016/0022-0248(84)90403-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：96 / 101

页数：6

共 18 条

[1]

AITCHISON K, 1983, THESIS U LONDON

[2] DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J].

BASS, SJ .

JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :172-178

[3]

Bond A., 1980, MODERN POLAROGRAPHIC

[4] A SIMPLIFIED TECHNIQUE FOR MOCVD OF III-V-COMPOUNDS [J].

CHATTERJEE, AK ;

FAKTOR, MM ;

MOSS, RH ;

WHITE, EAD .

JOURNAL DE PHYSIQUE, 1982, 43 (NC-5) :491-503

[5]

GOBEL EO, 1982, GAINASP ALLOY SEMICO

[6] OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

GOETZ, KH ;

BIMBERG, D ;

JURGENSEN, H ;

SELDERS, J ;

SOLOMONOV, AV ;

GLINSKII, GF ;

RAZEGHI, M .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4543-4552

[7]

HALLIWELL MAG, UNPUB

[8] ASSESSMENT OF ADVANCED LASER STRUCTURES BY PHOTO-LUMINESCENCE [J].

HATCH, CB ;

MURRELL, DL ;

WALLING, RH .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1982, 129 (06) :214-217

[9] TEM STUDIES OF MOVPE (GA, IN)AS INTERFACES WITH INP SUBSTRATES [J].

HOCKLY, M ;

WHITE, EAD .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :334-339

[10] OMVPE GROWTH OF INP USING TMIN [J].

HSU, CC ;

COHEN, RM ;

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1983, 63 (01) :8-12

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