共 50 条
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- [2] CHANGES IN ELECTROPHYSICAL PROPERTIES OF TRANSMUTATION-DOPED GALLIUM-ARSENIDE DURING ANNEALING SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (12): : 1364 - 1367
- [3] ELECTROPHYSICAL PROPERTIES OF GALLIUM-ARSENIDE DOPED BY GERMANIUM AND ISOVALENT INDIUM AND ANTIMONY IMPARITIES IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1987, 30 (09): : 3 - 8
- [4] METHOD OF MEASURING THE INHOMOGENEITIES OF THE ELECTROPHYSICAL PROPERTIES OF SEMIINSULATING GALLIUM-ARSENIDE INDUSTRIAL LABORATORY, 1987, 53 (05): : 402 - 406
- [5] INFLUENCE OF DEVIATIONS FROM STOICHIOMETRY ON ELECTROPHYSICAL PROPERTIES OF NUCLEAR-TRANSMUTATION-DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (01): : 113 - 114
- [6] PROPERTIES OF NICKEL-DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (04): : 469 - 471
- [7] MAGNETIC PROPERTIES OF IRON-DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (02): : 299 - 300
- [8] SOME PROPERTIES OF CHROMIUM-DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (07): : 958 - 959
- [10] ADSORPTION OF WATER VAPOR ON GALLIUM-ARSENIDE RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY,USSR, 1971, 45 (09): : 1346 - &