SEGREGATION AND TRAPPING OF ERBIUM DURING SILICON MOLECULAR-BEAM EPITAXY

被引：46

作者：

SERNA, R ^{[1
]}

LOHMEIER, M ^{[1
]}

ZAGWIJN, PM ^{[1
]}

VLIEG, E ^{[1
]}

POLMAN, A ^{[1
]}

机构：

[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 11期

关键词：

D O I：

10.1063/1.113209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Erbium surface segregation is observed during growth of Er-doped Si by molecular beam epitaxy on Si(100) at 600°C. Once a critical Er surface areal density of 2×1014Er/cm2 is reached, enhanced Er trapping is observed, possibly due to the formation of silicide precipitates. Er segregation on Si(100) is fully avoided when growth is performed in an oxygen background pressure of ∼10-10mbar, due to the formation of Er-O complexes. No Er segregation is observed on Si(111), which is attributed to the formation of epitaxial Er3Si5 precipitates.© 1995 American Institute of Physics.

引用

页码：1385 / 1387

页数：3

共 18 条

[1] LOCAL-STRUCTURE OF 1.54-MU-M-LUMINESCENCE ER-3+ IMPLANTED IN SI
ADLER, DL
JACOBSON, DC
EAGLESHAM, DJ
MARCUS, MA
BENTON, JL
POATE, JM
CITRIN, PH
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (18) : 2181 - 2183
[2] ANDRIEU S, 1989, J APPL PHYS, V65, P2687
[3] TEMPERATURE-DEPENDENCE AND QUENCHING PROCESSES OF THE INTRA-4F LUMINESCENCE OF ER IN CRYSTALLINE SI
COFFA, S
FRANZO, G
PRIOLO, F
POLMAN, A
SERNA, R
[J]. PHYSICAL REVIEW B, 1994, 49 (23): : 16313 - 16320
[4] ERBIUM IN CRYSTAL SILICON - SEGREGATION AND TRAPPING DURING SOLID-PHASE EPITAXY OF AMORPHOUS-SILICON
CUSTER, JS
POLMAN, A
VANPINXTEREN, HM
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (06) : 2809 - 2817
[5] DAVITAYA FA, 1993, MATER RES SOC SYMP P, V301, P97, DOI 10.1557/PROC-301-97
[6] EFEOGIU HE, 1993, SEMICOND SCI TECH, V8, P238
[7] EFEOGLU H, 1991, MATER RES SOC SYMP P, V220, P367, DOI 10.1557/PROC-220-367
[8] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON
ENNEN, H
SCHNEIDER, J
POMRENKE, G
AXMANN, A
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 943 - 945
[9] 1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY
ENNEN, H
POMRENKE, G
AXMANN, A
EISELE, K
HAYDL, W
SCHNEIDER, J
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 381 - 383
[10] ORIGIN OF OXYGEN-INDUCED LAYER-BY-LAYER GROWTH IN HOMOEPITAXY ON PT(111)
ESCH, S
HOHAGE, M
MICHELY, T
COMSA, G
[J]. PHYSICAL REVIEW LETTERS, 1994, 72 (04) : 518 - 521

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