OBSERVATION OF BULK LANDAU-LEVELS IN TRANSVERSE MAGNETO-TUNNELING IN ALXGA1-XAS CAPACITORS

被引：24
作者：
HICKMOTT, TW
机构：
[1] IBM Thomas J. Watson Research Center Yorktown Heights, NY 10598, United States
来源：
SOLID STATE COMMUNICATIONS | 1987年 / 63卷 / 05期
关键词：
D O I：
10.1016/0038-1098(87)91132-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
CAPACITORS
引用
收藏
页码：371 / 375
页数：5
相关论文
共 13 条
[1]   ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].
ANDO, T ;
FOWLER, AB ;
STERN, F .
REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672
[2]  
CAPASSO F, 1986, IEEE J QUANTUM ELECT, V22, P1835
[3]   TUNNELING AND HOT-ELECTRON EFFECTS IN SINGLE BARRIER (ALGA)AS/GAAS HETEROSTRUCTURE DEVICES [J].
EAVES, L ;
GUIMARAES, PSS ;
SNELL, BR ;
SHEARD, FW ;
TAYLOR, DC ;
TOOMBS, GA ;
PORTAL, JC ;
DMOWSKI, L ;
SINGER, KE ;
HILL, G ;
PATE, MA .
SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (01) :49-55
[4]   A STUDY OF INTERSUBBAND SCATTERING IN GAAS-ALXGA1-XAS HETEROSTRUCTURES BY MEANS OF A PARALLEL MAGNETIC-FIELD [J].
ENGLERT, T ;
MAAN, JC ;
TSUI, DC ;
GOSSARD, AC .
SOLID STATE COMMUNICATIONS, 1983, 45 (11) :989-991
[5]   A BIRDS-EYE-VIEW ON THE EVOLUTION OF SEMICONDUCTOR SUPERLATTICES AND QUANTUM-WELLS [J].
ESAKI, L .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1611-1624
[6]   EFFECT OF A TRANSVERSE MAGNETIC-FIELD ON THE TUNNEL CURRENT THROUGH THICK AND LOW SEMICONDUCTOR BARRIERS [J].
GUERET, P ;
BARATOFF, A ;
MARCLAY, E .
EUROPHYSICS LETTERS, 1987, 3 (03) :367-372
[7]   DYNAMICS OF EXTREME NONEQUILIBRIUM ELECTRON-TRANSPORT IN GAAS [J].
HAYES, JR ;
LEVI, AFJ .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1744-1752
[8]   EVIDENCE OF HOT-ELECTRON TRANSFER INTO AN UPPER VALLEY IN GAAS [J].
HEIBLUM, M ;
CALLEJA, E ;
ANDERSON, IM ;
DUMKE, WP ;
KNOEDLER, CM ;
OSTERLING, L .
PHYSICAL REVIEW LETTERS, 1986, 56 (26) :2854-2857
[9]   RESONANT FOWLER-NORDHEIM TUNNELING IN N-GAAS-UNDOPED ALXGA1-XAS-N+GAAS CAPACITORS [J].
HICKMOTT, TW ;
SOLOMON, PM ;
FISCHER, R ;
MORKOC, H .
APPLIED PHYSICS LETTERS, 1984, 44 (01) :90-92
[10]   NEGATIVE CHARGE, BARRIER HEIGHTS, AND THE CONDUCTION-BAND DISCONTINUITY IN ALXGA1-XAS CAPACITORS [J].
HICKMOTT, TW ;
SOLOMON, PM ;
FISCHER, R ;
MORKOC, H .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2844-2853
12