EFFECT OF ELECTRON-IRRADIATION ON BI(2)SR(2)CACU(2)O(8)AND BI2SR2CUO6 SUPERCONDUCTORS

被引:29
作者
RULLIERALBENQUE, F [1 ]
LEGRIS, A [1 ]
BERGER, H [1 ]
FORRO, L [1 ]
机构
[1] ECOLE POLYTECH FED LAUSANNE,DEPT PHYS,CH-1015 LAUSANNE,SWITZERLAND
来源
PHYSICA C | 1995年 / 254卷 / 1-2期
关键词
D O I
10.1016/0921-4534(95)00552-8
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of electron-irradiation induced defects on the superconducting transition temperature (T-c), on the normal-state resistivity and the stability of defects on thermal cycling were studied in Bi2Sr2CaCu2O8 and Bi2Sr2CuO6 superconductors. It was found that T-c/T-c0 is about three times less sensitive to irradiation-induced defects in the former than in the latter compound. We show that the ab plane resistivity increase in both compounds is due to the decrease of the mean free path caused by defects created in the CuO2 planes. The defects start to anneal above 100 K and, at 300 K; only 50% of the low-temperature defect concentration is left.
引用
收藏
页码:88 / 92
页数:5
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