THE EFFECT OF DX CENTERS ON MOBILITY IN HEAVILY DOPED N-GAAS CALCULATED BY MONTE-CARLO SIMULATIONS

被引：11
作者：
VANDERWEL, PJ
ANDERS, MJ
GILING, LJ
KOSSUT, J
机构：
[1] CATHOLIC UNIV NIJMEGEN,MAT RES INST,6525 ED NIJMEGEN,NETHERLANDS
[2] POLISH ACAD SCI,INST PHYS,PL-02668 WARSAW,POLAND
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 02期
关键词：
D O I：
10.1088/0268-1242/8/2/011
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The hydrostatic pressure dependence of both the transport and quantum mobility observed in n-GaAs heavily doped with Si is calculated by taking into account spatial correlations due to Coulomb interactions. The only mechanism included in the calculations is ionized impurity scattering in which the charged centres are ionized donors, occupied DX centres and ionized acceptors. The correlation functions that reflect the spatial correlations are obtained by Monte Carlo simulations which enable us to account for the DX freeze-out temperature. It is shown that it is possible to simulate absolute values of experimental mobility data up to 20 kbar for samples with different compensation ratios. The results confirm the negative-U model for DX centres.
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页码：211 / 218
页数：8
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